Specification:
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 5 V
Collector current IC 30 mA
Collector power dissipation PC 400 mW
Junction temperature Tj 150 °C
summary:
Silicon NPN epitaxial planar type Transistors.
Features
Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
